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BR211SM

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VD Continuous voltage - 75% of V(BO )typ V ITSM1 Non repetitive peak current 10/320 s impulse equivalent to 10/700 s, 1.6 kV voltage impulse(CCITT K17) - 40 A ITSM2 Non repetitive on-state cu...

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BR211SM: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VD Continuous voltage - 75% of V(BO )typ V ITSM1 Non repetitive peak current 10/320 s impulse equivalent...

BR211SM Data Sheet

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Part Number:
BR211SM
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Description



Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VD Continuous voltage  
-
75% of V(BO )typ
V
ITSM1 Non repetitive peak current 10/320 s impulse equivalent to
10/700 s, 1.6 kV voltage impulse
(CCITT K17)
-
40
A
ITSM2 Non repetitive on-state current half sine wave; t = 10 ms;
Tj = 70 ?C prior to surge
-
15
A
I t I2 t for fusing tp = 10 ms
-
1.1
A2 s
dIT /dt
 Rate of rise of on-state current after V turn-on tp = 10 s 
-
50
A/s
Ptot Continuous dissipation T = 25
-
1.2
W
PTM Peak dissipation tp = 1 ms; Ta = 25 
-
50
W
Tstg Storage temperature  
-40
150
Ta Operating ambient temperature off-state
-
70
Tvj Overload junction temperature on-state
-
150



Description

A range of bidirectional, breakover diodes BR211SM in a two terminal, surface mounting, plastic envelope. These devicesfeaturecontrolledbreakover voltage and high holding current together with high peak current handling capability. Typical application of BR211SM is transient overvoltage protection in telecommunications equipment.




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