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BR24L01AFVM-W

Features: 1) 128 registers * 8 bits serial architecture.2) Single power supply (1.8V to 5.5V).3) Two wire serial interface.4) Self-timed write cycle with automatic erase.5) 8 byte page write mode.6) Low power consumption. Write (5V) : 1.2mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1A (Typ....

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SeekIC No. : 004301436 Detail

BR24L01AFVM-W: Features: 1) 128 registers * 8 bits serial architecture.2) Single power supply (1.8V to 5.5V).3) Two wire serial interface.4) Self-timed write cycle with automatic erase.5) 8 byte page write mode.6)...

BR24L01AFVM-W Data Sheet

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Part Number:
BR24L01AFVM-W
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 1) 128 registers * 8 bits serial architecture.
 2) Single power supply (1.8V to 5.5V).
 3) Two wire serial interface.
 4) Self-timed write cycle with automatic erase.
 5) 8 byte page write mode.
 6) Low power consumption.
       Write     (5V) : 1.2mA (Typ.)
       Read   (5V) : 0.2mA (Typ.)
       Standby (5V) : 0.1A (Typ.)
 7) DATA security
       Write protect feature (WP pin) .
       Inhibit to WRITE at low VCC.
 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8
 9) High reliability EEPROM with Double-Cell Structure
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL*SDA for noise suppression.
14) Initial data FFh in all address.


Application

General purpose


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limits
Unit
Supply voltage
VCC
-0.3 to +6.5
V
Power dissipation
Pd
800(DIP8) *1
mW
450(SOP8) *2
450(SOP-J8) *2
300(SSOP-B8) *3
310(MSOP8) *4
Storage temperature
Tstg
-65 to +125
°C
Operating temperature
T
-40 to +85
°C
Terminal voltage
-
-0.3 to VCC+0.3
V

*1      Degradation is done at 8.0mW/°C for operation above 25°C.
*2, 3  Degradation is done at 4.5mW/°C for operation above 25°C.
*4      Degradation is done at 3.0mW/°C for operation above 25°C.
*5      Degradation is done at 3.1mW/°C for operation above 25°C.


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