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BR24L08FVM-W

Features: 1) 1024 registers * 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0....

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SeekIC No. : 004301452 Detail

BR24L08FVM-W: Features: 1) 1024 registers * 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mo...

BR24L08FVM-W Data Sheet

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Part Number:
BR24L08FVM-W
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 1) 1024 registers * 8 bits serial architecture.
 2) Single power supply (1.8V to 5.5V).
 3) Two wire serial interface.
 4) Self-timed write cycle with automatic erase.
 5) 16byte Page Write mode.
 6) Low power consumption.
       Write     (5V) : 1.5mA (Typ.)
       Read   (5V) : 0.2mA (Typ.) 
       Standby (5V) : 0.1A (Typ.)
 7) DATA security
       Write protect feature (WP pin).
       Inhibit to WRITE at low VCC.
 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8
 9) High reliability EEPROM with Double-Cell structure.
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years 
13) Filtered inputs in SCL*SDA for noise suppression.
14) Initial data FFh in all address.  


Application

General purpose


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limits
Unit
Supply voltage
VCC
-0.3 to +6.5
V
Power dissipation
Pd
800(DIP8) *1
mW
450(SOP8) *2
450(SOP-J8) *2
300(SSOP-B8) *3
310(MSOP8) *4
Storage temperature
Tstg
-65 to +125
°C
Operating temperature
Topr
-40 to +85
°C
Terminal voltage
-
-0.3 to VCC+0.3
V

*1  Reduced by 8.0mW for each increase in Ta of 1°C over 25°C.
*2  Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
*3  Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
*4  Reduced by 3.1mW for each increase in Ta of 1°C over 25°C.


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