BR93LC56RF

Features:

• Low power CMOS technology
• 128 ´ 16 bit configuration
• 2.7V to 5.5V operation
• Low power dissipation
3mA (max.) active current: 5V
5mA (max.) standby current: 5V
• Auto increment for efficient data bump
• Automatic erase-before-write
• Hardware and software write protection
Default to write-disabled state at power up
Software instructions for write-enable / disable
Vcc lock out inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
• Device status signal during write cycle
• TTL compatible Input / Output
• 100,000 ERASE / write cycles
• 10 years Data Retention


Pinout




Specifications

Parameter		Symbol	Limits	Unit
Applied voltage		Vcc	0.3 ~ + 6.5	V
Power dissipation	BR93LC56	Pd	500*1	mW
	BR93LC56F / RF		350*2
	BR93LC56FV		300*3
Storage temperature		Tstg	65 ~ + 125	°C
Operating temperature		Topr	40 ~ + 85	°C
Terminal voltage		-	0.3 ~ Vcc + 0.3	V

*1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C.
*2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C.
*3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.


Description

The BR93LC56 is CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 128 words ´ 16 bits (2,048 bits), and each word can be accessed individually and data read from it and written to it.

Operation control of BR93LC56RF is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin.

The only difference between the BR93LC56 / F / RF / FV is the write disable voltage and its accompanying write enable voltage. All other functions and characteristics are the same.