BRF6300

The BRF6300 is designed as the high performance silicon bipolar transistor that is intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF610 an excellent choice for battery applications.

Features of the BRF6300 are:(1)high gain bandwidth product ft=12 GHz typ @ IC =10 mA;(2)low noise figure 1.6 dB typ at 1 GHz and 2.0 dB typ at 2 GHz;(3)dice, plastic, hermetic and surface mount packages available.

The absolute maximum ratings of the BRF6300 can be summarized as:(1)gain bandwidth product:12 GHz;(2)insertion power gain f=1.0 GHz:18.1;(3)insertion power gain f=2.0 GHz:12.8;(4)power output at 1dB compression:12 dBm;(5)gain at 1dB compression:15 dBm;(6)noise figure: VCE=8V, Ic=2mA:1.6 dB;(7)collector base capacitance:0.11 pF. If you want to know more information such as the electrical characteristics about the BRF6300, please download the datasheet in www.seekic.com or www.chinaicmart.com .