MOSFET 200V 250mA
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.25 A | ||
| Resistance Drain-Source RDS (on) : | 6400 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-92 | Packaging : | Bulk |
| Rating | Symbol | Value | Unit |
| DrainSource Voltage | VDS | 200 | Vdc |
| GateSource Voltage Continuous Nonrepetitive (tp 3 50 ms) |
VGS VGSM |
±20 ±30 |
Vdc Vpk |
| Drain Current Continuous (Note 1.) Pulsed (Note 2.) |
ID IDM |
250 500 |
mAdc |
| Total Device Dissipation @ TA = 25°C Derate above 25°C |
PD | 350 | mW |
| Operating and Storage Junction Temperature Range |
TJ, Tstg | 55 to 150 |