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BS107AG

MOSFET 200V 250mA N-Channel

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SeekIC No. : 00163107 Detail

BS107AG: MOSFET 200V 250mA N-Channel

BS107AG Data Sheet

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Part Number:
BS107AG
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 6400 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Package / Case : TO-92
Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 6400 mOhms


Parameters:

Technical/Catalog InformationBS107AG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C250mA
Rds On (Max) @ Id, Vgs6.4 Ohm @ 250mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max350mW
PackagingBulk
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92-3, TO-226AA (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BS107AG
BS107AG
BS107AGOS ND
BS107AGOSND
BS107AGOS



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