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BS107ARL1G

MOSFET 200V 250mA N-Channel

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SeekIC No. : 00146340 Detail

BS107ARL1G: MOSFET 200V 250mA N-Channel

BS107ARL1G Data Sheet

floor Price/Ceiling Price

US $ .12~.26 / Piece | Get Latest Price
Part Number:
BS107ARL1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.26
  • $.2
  • $.17
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 6400 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-92
Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 6400 mOhms


Parameters:

Technical/Catalog InformationBS107ARL1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C250mA
Rds On (Max) @ Id, Vgs6.4 Ohm @ 250mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max350mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92-3, TO-226AA (Formed Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BS107ARL1G
BS107ARL1G
BS107ARL1GOSDKR ND
BS107ARL1GOSDKRND
BS107ARL1GOSDKR



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