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BS107P

MOSFET N-Chnl 200V

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SeekIC No. : 00150462 Detail

BS107P: MOSFET N-Chnl 200V

BS107P Data Sheet

floor Price/Ceiling Price

US $ .27~.55 / Piece | Get Latest Price
Part Number:
BS107P
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.55
  • $.47
  • $.32
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 30000 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : E-Line Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Continuous Drain Current : 0.12 A
Package / Case : E-Line
Resistance Drain-Source RDS (on) : 30000 mOhms at 5 V


Features:

200 Volt VDS
RDS(on)=23W




Specifications

Part Number BS107P
Config/
Polarity		 N
PD
(W)		 0.5
VDSS
(V)		 200
VGSS (+/-)
(V)		 20
ID
(A)		 0.12
RDS(on) Max() @ VGS; 2.4V
RDS(on) Max() @ VGS; 2.5V
RDS(on) Max() @ VGS; 2.6V 23
RDS(on) Max() @ VGS; 3V
RDS(on) Max() @ VGS; 4.3V
RDS(on) Max() @ VGS; 4.5V
RDS(on) Max() @ VGS; 5V 30
RDS(on) Max() @ VGS; 6V
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)
Ciss (typ)
(pF)		 58
Qg (typ) (nC)
@ VGS;4.5V
Qg (typ) (nC)
@ VGS; 10V		 2.7


PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuous Drain Current at Tamb=25°C ID 0.12 A
Pulsed Drain Current IDM 2 A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb =25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





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