BS108

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Package / Case : TO-92
Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 8000 mOhms at 2.8 V


Specifications

Parameter	Symbol	Limit	Unit
DrainSource Voltage	VDSS	200	Vdc
GateSource Voltage	VGS	±20	Vdc
Drain Current Continuous(1) Pulsed(2)	ID IDM	250 500	mAdc
Total Power Dissipation @ TA = 25°C Derate above TA = 25°C	PD	350 6.4	mW mW/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C

1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.