BS108ZL1G

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-92
Packaging : Ammo
Continuous Drain Current : 0.25 A
Resistance Drain-Source RDS (on) : 8000 mOhms at 2.8 V


Parameters:

Technical/Catalog Information	BS108ZL1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	250mA
Rds On (Max) @ Id, Vgs	8 Ohm @ 100mA, 2.8V
Input Capacitance (Ciss) @ Vds	150pF @ 25V
Power - Max	350mW
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3, TO-226AA (Formed Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BS108ZL1G BS108ZL1G BS108ZL1GOS ND BS108ZL1GOSND BS108ZL1GOS