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BS170G

MOSFET 60V 500mA N-Channel

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SeekIC No. : 00149050 Detail

BS170G: MOSFET 60V 500mA N-Channel

BS170G Data Sheet

floor Price/Ceiling Price

US $ .07~.26 / Piece | Get Latest Price
Part Number:
BS170G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.26
  • $.15
  • $.12
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 5000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Resistance Drain-Source RDS (on) : 5000 mOhms
Continuous Drain Current : 0.5 A


Parameters:

Technical/Catalog InformationBS170G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 10V
Power - Max350mW
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92-3, TO-226AA (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BS170G
BS170G
BS170GOS ND
BS170GOSND
BS170GOS



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