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BS170_J35Z

MOSFET 60V N-Ch Signal DMOS

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SeekIC No. : 00160212 Detail

BS170_J35Z: MOSFET 60V N-Ch Signal DMOS

BS170_J35Z Data Sheet

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Part Number:
BS170_J35Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 500 mA Resistance Drain-Source RDS (on) : 1.2 Ohms
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : 500 mA


Parameters:

Technical/Catalog InformationBS170_J35Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max830mW
PackagingBulk
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BS170_J35Z
BS170_J35Z



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