Features: · High input impedance· Low gate threshold voltage· Low drain-source ON resistance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value Unit Drain-Source Voltage VDSS 60 ...
BS223: Features: · High input impedance· Low gate threshold voltage· Low drain-source ON resistance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway·...
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| Symbol | Value | Unit | |
| Drain-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGS | 60 | V |
| Gate-Source Voltage (pulsed) | VGS | ±20 | V |
| Drain Current (continuous) at TSB = 50 °C | ID | 1 | mA |
| Power Dissipation at TSB = 50 °C | Ptot | 8301) | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | TSTG | 65 to +150 | |
| 1) Device on fiberglass substrate, see layout | |||