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BS250

MOSFET 45V 0.18A 0.83W

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BS250: MOSFET 45V 0.18A 0.83W

BS250 Data Sheet

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Part Number:
BS250
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 45 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 0.18 A
Resistance Drain-Source RDS (on) : 14000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92-3    

Description

Packaging :
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 25 V
Drain-Source Breakdown Voltage : 45 V
Continuous Drain Current : 0.18 A
Resistance Drain-Source RDS (on) : 14000 mOhms
Package / Case : TO-92-3


Features:

 ` High-Side Switching
 ` Low On-Resistance: 8
 ` Low Threshold: −1.9 V
 ` Fast Switching Speed: 16 ns
 ` Low Input Capacitance: 15 pF


Application

· Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Power Supply, Converter Circuits
· Motor Control


Specifications

Parameter
Symbol
TP0610L
TP0610T
VP0610L
VP0610T
BS250
Unit
Drain-Source Voltage
VDS
−60
−60
−60
−60
−45
V
Gate-Source Voltage
VGS
±30
±30
±30
±30
±25
A
Continuous Drain Current ID

(TJ = 150)
TA= 25
ID
−0.18
−0.12
−0.18
−0.12
−0.18
TA= 100
−0.11
−0.07
−0.11
−0.07
Pulsed Drain Currenta
IDM
−0.8
−0.4
−0.8
−0.4
W
Power Dissipation
TA= 25
PD
0.8
0.36
0.8
0.36
0.83
TA= 100
0.32
0.14
0.32
0.14
Thermal Resistance, Junction-to-Ambient
R thJA
156
350
156
350
150
/W
Operating Junction and Storage Temperature Range
T J, Tstg
−55 to 150
Notes
a. Pulse width limited by maximum junction temperature. For applications information see AN804.


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