BS270

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.4 A
Resistance Drain-Source RDS (on) : 2 Ohms
Package / Case : TO-92


Features:

·400mA, 60V. R_DS(ON) = 2W @ V_GS = 10V.
·High density cell design for low R_DS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.
·High saturation current capability.


Specifications

PARAMETER		Symbol	Value	Unit
Drain-Source Voltage		VDS	-60	V
Gate-Source Voltage		VGS	± 20
Continuous Drain Current	TA = 25	ID	−0.27	A
	TA = 70		−0.22
Pulse Drain Currenta		IDM	−1.0	A
Power Dissipation	TA = 25	PD	0.8	W
	TA = 70		0.51
Maximum Junction-to-Ambient		RthJA	156	/W
Operating and Storage Temperature Range		Tj, TSTG	-55 to +150

Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.BS270 can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Parameters:

Technical/Catalog Information	BS270
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	400mA
Rds On (Max) @ Id, Vgs	2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	625mW
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BS270 BS270