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D/C:TSOP44
Part Number: BS616LV1010
D/C: TSOP44
Description: Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 5....
- Table of contents:
BS616LV1010
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Suppliers
DataSheet
General Description
BS616LV1010 General Description
Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.02uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.
The BS616LV1010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1010 is available in the JEDEC standard 44-pin TSOP Type II and 48-pin BGA package.
BS616LV1010 Maximum Ratings
| SYMBOL | PARAMETER | RATING | UNITS |
| VTERM | Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
| TBIAS | Temperature Under Bias | -40 to +85 | |
| TSTG | Storage Temperature | -60 to +150 | |
| PT | Power Dissipation | 1.0 | W |
| IOUT | DC Output Current | 20 | mA |
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
BS616LV1010 Features
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time : -70 70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
• Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time : -70 70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
BS616LV1010 Connection Diagram
BS616LV1010
PDF/DataSheet Download
- Datasheet: BS616LV1010
- File Size: 221597 KB
- Manufacturer: BSI [Brilliance Semiconductor]
- Click here to Download
- ·BS616LV1010AC
- BSI [Brilliance Semiconductor]
- Very Low Power/Voltage CMOS SRAM 64K X 16 bit
- 221597 KB
- ·BS616LV1010AI
- BSI [Brilliance Semiconductor]
- Very Low Power/Voltage CMOS SRAM 64K X 16 bit
- 221597 KB
- ·BS616LV1010EC
- BSI [Brilliance Semiconductor]
- Very Low Power/Voltage CMOS SRAM 64K X 16 bit
- 221597 KB
- ·BS616LV1010EI
- BSI [Brilliance Semiconductor]
- Very Low Power/Voltage CMOS SRAM 64K X 16 bit
- 221597 KB
- ·BS616LV1010FI55
- BSI [Brilliance Semiconductor]
- Very Low Power CMOS SRAM 1M X 16 bit
- 168792 KB
- ·BS616LV1010FI70
- BSI [Brilliance Semiconductor]
- Very Low Power CMOS SRAM 1M X 16 bit
- 168792 KB
- ·BS616LV1011
- BSI [Brilliance Semiconductor]
- Very Low Power/Voltage CMOS SRAM 64K X 16 bit
- 267556 KB
- ·BS616LV1011AC
- BSI [Brilliance Semiconductor]
- Very Low Power/Voltage CMOS SRAM 64K X 16 bit
- 267556 KB
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