BS62LV1027PCP55

Features: · Wide Vcc operation voltage : 2.4V ~ 5.5V· Very low power consumption :Vcc = 3.0V C-grade : 17mA (@55ns) operating current I- grade : 18mA (@55ns) operating current C-grade : 14mA (@70ns) operating current I- grade : 15mA (@70ns) operating current 0.1uA (Typ.) CMOS standby current Vcc ...

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SeekIC No. : 004301907 Detail

BS62LV1027PCP55: Features: · Wide Vcc operation voltage : 2.4V ~ 5.5V· Very low power consumption :Vcc = 3.0V C-grade : 17mA (@55ns) operating current I- grade : 18mA (@55ns) operating current C-grade : 14mA (@70ns)...

floor Price/Ceiling Price

Part Number:
BS62LV1027PCP55
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·  Wide Vcc operation voltage : 2.4V ~ 5.5V
·  Very low power consumption :
           Vcc = 3.0V    C-grade : 17mA (@55ns) operating current
                               I- grade : 18mA (@55ns) operating current
                               C-grade : 14mA (@70ns) operating current
                               I- grade : 15mA (@70ns) operating current
                               0.1uA (Typ.) CMOS standby current
          Vcc = 5.0V     C-grade : 46mA (55ns) operating current
                               I- grade : 47mA (55ns) operating current
                               C-grade : 38mA (70ns) operating current
                               I- grade : 39mA (70ns) operating current
                               0.6uA (Typ.) CMOS standby current
·  High speed access time :
         -55          55ns
         -70          70ns
·  Automatic power down when chip is deselected
·  Easy expansion with CE2, CE1, and OE options
·  Three state outputs and TTL compatible
·  Fully static operation
·  Data retention supply voltage as low as 1.5V




Specifications

SYMBOL
PARAMETER
RATING
UNITS
VTERM
Terminal Voltage with
Respect to GND
-0.5 to Vcc+0.5
V
TBIAS
Temperature Under Bias
-40 to +85
TSTG
Storage Temperature
-60 to +150
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA


1. Stresses greater than those listed under  ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and  functional  operation of the device at these or any other  conditions above  those  indicated in the operational sections of this  specification is not implied.  Exposure to absolute maximum   rating   conditions  for   extended  periods  may  affect reliability.




Description

The  BS62LV1027  is  a  high  performance, very   low  power   CMOS  Static Random Access Memory organized as 131,072 words  by 8  bits and operates from a wide range of  2.4V to 5.5V supply voltage.

Advanced CMOS  technology and circuit  techniques of BS62LV1027PCP55 provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25 and maximum access time of  55ns at 3V/85 .

Easy  memory  expansion of BS62LV1027PCP55  is   provided   by  an  active   LOW  chip enable (CE1),   an  active  HIGH  chip  enable (CE2),  and  active LOW output  enable (OE)  and  three-state output drivers.

The  BS62LV1027 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected.

The  BS62LV1027  is available in DICE form , JEDEC standard  32  pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP,8mm x13.4 mm STSOP and 8mmx20mm TSOP.




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