FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 20A
Gate Charge (Qg) @ Vgs: 62nC @ 10V
Packaging: Cut Tape (CT)
Power - Max: 78W
Package / Case: 8-PowerVDFN
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TSDSON-8 (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 4800pF @ 30V
Parameters: | Technical/Catalog Information | BS7067N06LS3G |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 4800pF @ 30V |
| Power - Max | 78W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 62nC @ 10V |
| Package / Case | 8-TSDSON |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BS7067N06LS3G
BS7067N06LS3G
BS7067N06LS3GINCT ND
BS7067N06LS3GINCTND
BS7067N06LS3GINCT
|
BS7067N06LS3G Data Sheet
