FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 50A
Package / Case: 8-PowerTDFN
Power - Max: 104W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) @ Vgs: 58nC @ 5V
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 50A, 10V
Supplier Device Package: P-TDSON-8 (5.15x6.15)
Input Capacitance (Ciss) @ Vds: 7490pF @ 15V
Features: • Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt ratedPinout
Specifications
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
ID |
T C=25 °C |
50 |
V |
| T C=100 °C |
50 |
T A=25 °C,
RthJA=45 K/W2) |
28 |
| Pulsed drain current |
ID,pulse |
T C=25 °C3) |
200 |
| Avalanche energy, single pulse |
EAS |
I D=50 A, RGS=25 Ω |
800 |
mJ |
| Reverse diode dv /dt |
dv /dt |
I D=50 A, VDS=24 V,
di /dt =200 A/µs,
T j,max=150 °C |
6 |
kV/µs |
| Gate source voltage |
VGS |
|
±20 |
V |
| Power dissipation |
Ptot |
T C=25 °C |
104 |
W |
T A=25 °C,
RthJA=45 K/W2) |
2.8 |
| Operating and storage temperature |
Tj, Tstg |
|
-55 ... 150 |
°C |
| IEC climatic category; DIN IEC 68-1 |
|
|
55/150/56 |
|
Parameters: | Technical/Catalog Information | BSC022N03S |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 7490pF @ 15V |
| Power - Max | 104W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 58nC @ 5V |
| Package / Case | TDSON-8 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSC022N03S
BSC022N03S
|
BSC022N03S Data Sheet
