BSC032N03SG

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Cut Tape (CT)
Power - Max: 78W
Gate Charge (Qg) @ Vgs: 39nC @ 5V
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TDSON-8 (5.15x6.15)
Vgs(th) (Max) @ Id: 2V @ 70µA
Input Capacitance (Ciss) @ Vds: 5080pF @ 15V


Parameters:

Technical/Catalog Information	BSC032N03SG
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	5080pF @ 15V
Power - Max	78W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	39nC @ 5V
Package / Case	TDSON-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSC032N03SG BSC032N03SG BSC032N03SGINCT ND BSC032N03SGINCTND BSC032N03SGINCT