BSC119N03S

Features of the BSC119N03S are:(1)fast switching MOSFET for SMPS;(2)optimized technology for notebook DC/DC converters;(3)qualified according to JEDEC for target applications;(4)N-channel;(5)logic level;(6)excellent gate charge x RDS(on) product (FOM);(7)very low on-resistance RDS(on);(8)superior thermal resistance;(9)avalanche rated;(10)Pb-free plating; RoHS compliant.

The absolute maximum ratings of the BSC119N03S can be summarized as:(1):the parameter is continuous drain current,the symbol is ID,the conditions is Tc=25,the value is 30,the unit is A;(2):the parameter is continuous drain current,the symbol is ID,the conditions is Tc=100,the value is 30,the unit is A;(3):the parameter is continuous drain current,the symbol is ID,the conditions is TA=25 RthJA=45 K/W,the value is 11.9,the unit is A;(4):the parameter is pulsed drain current,the symbol is ID,pulse,the conditions is Tc=25,the value is 120,the unit is A; (5):the parameter is avalanche energy,single pulse,the symbol is EAS,pulse,the conditions is ID=30A,RGS=25,the value is 60,the unit is mJ;(6):the parameter is reverse diode dv /dt,the symbol is dv /dt,pulse,the conditions is I D=30 A, VDS=24 V,di /dt =200 A/s,T j,max=150 ,the value is 6,the unit is kV/s;(7):the parameter is gate source voltage,the symbol is VGS,the value is ±20,the unit is V;(8):the parameter is power dissipation,the symbol is Ptot,the conditions is Tc=25,the value is 43,the unit is W;(9):the parameter is power dissipation,the symbol is Ptot,the conditions is TA=25 RthJA=45 K/W,the value is 28,the unit is W;(10):the parameter is operating and storage temperature,the symbol is Tj,Tstg,the value is -55 to 150,the unit is ;(11):the parameter is IEC climatic category; DIN IEC 68-1,the value is 55/150/56.