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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: BSM100GAL120DN2

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

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BSM100GAL120DN2 Maximum Ratings

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage, RGS = 20 k
VCGR
1000
 Gate-emitter voltage  
VGE
 
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
150
100
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
 
300
200
A
Power dissipation per IGBT
TC = 25 °C
P tot
800
Chip temperature
Tj
+ 150
°C
Storage temperature
 Tstg
55 . + 150
W

BSM100GAL120DN2 Features

• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate

BSM100GAL120DN2 datasheet

BSM100GAL120DN2
PDF/DataSheet Download

  • Datasheet: BSM100GAL120DN2
  • File Size: 83162 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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