BSM100GAL120DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : 400 nA
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 150 A
Configuration : Half Bridge Module
Power Dissipation : 800 W
Package / Case : Half Bridge GAL 2


Features:

• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate


Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage, RGS = 20 k	VCGR	1000
Gate-emitter voltage	VGE	± 20
DC collector current TC = 25 °C TC = 80 °C	Ic	150 100
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	Ic puls	300 200	A
Power dissipation per IGBT TC = 25 °C	P tot	800
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	55 . + 150	W