BSM200GA120DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 200 nA
Package / Case : 62MM
Continuous Collector Current at 25 C : 300 A
Power Dissipation : 1550 W


Features:

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate




Description

The BSM200GA120DN2 is a type of IGBT power module.features of it are:(1)single switch;(2)incl uding fast free-wheeling diodes;(3)package with insulated metal base plate.

The absolute maximum ratings and electrical characteristics(Tj = 25 °C) of the BSM200GA120DN2 can be summarize d as:(1):collector-emitter voltage is 1200 V;(2):collector-gate voltage is 1200V when RGE is 20 kW;(3):gate-emitter voltage is ±20V;(4):DC collector current is 300A when TC is 25 °C,DC collector current is 200A when TC is 80 °C; (5):pulsed collector current is 600A when tp is 1 ms and TC is 25 °C,pulsed collector current is 400A when tp is 1 ms and TC is 80 °C;(6):power dissipation per IGBT is 1550W when TC is 25 °C;(7):chip temperature is+150;(8):stor age temperature ranges from -55 to+ 150.Electrical characteristics:(1):gate threshold voltage is 4.5V min,5.5V typ and 6.5V max when VGE is VCE and IC is 8 mA;(2):collector-emitter saturation voltage is 2.5V typ and 3V max wh en VGE is 15 V, IC is 200 A and Tj is 25 °C;(3):zero gate voltage collector current is 3mA typ and 4mA max when VC E is 1200 V, VGE is 0 V and Tj is 25 °C;(4):gate-emitter leakage current is 200nA max when VGE is 20 V and VCE is 0 V.