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BSM200GA170DN2

IGBT Modules N-CH 1.7KV 290A

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SeekIC No. : 00142149 Detail

BSM200GA170DN2: IGBT Modules N-CH 1.7KV 290A

BSM200GA170DN2 Data Sheet

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Part Number:
BSM200GA170DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Single Dual Emitter
Collector- Emitter Voltage VCEO Max : 1700 V Continuous Collector Current at 25 C : 290 A
Maximum Operating Temperature : + 150 C Package / Case : 62MM    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Continuous Collector Current at 25 C : 290 A
Package / Case : 62MM
Collector- Emitter Voltage VCEO Max : 1700 V
Configuration : Single Dual Emitter


Features:

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• RG on,min = 6.8 Ohm


Specifications

Parameter Symbol
Values
 Unit
Collector-emitter voltage VCE
1700
 V
Collector-gate voltage
RGE = 20 k		 VCGR
1700
Gate-emitter voltage VGE
±20
DC collector current
TC = 25
TC = 80
 IC
290
200
 A
Pulsed collector current, tp =1 ms
TC = 25
TC = 80
 ICpuls
580
400
Power dissipation per IGBT
TC = 25		 Ptot
1750
 W
Chip temperature Tj
+150
Storage temperature Tstg
-55 ... + 150
Thermal resistance, chip case RthJC
0.07
 K/W
Diode thermal resistance, chip case RthJCD
0.21
Insulation test voltage, t = 1min. Vis
4000
 Vac
Creepage distance -
20
 mm
Clearance -
11
DIN humidity category, DIN 40 040 -
F
 sec
IEC climatic category, DIN IEC 68-1 -
55 / 150 / 56



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