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MFG:EUPEC D/C:1IGBT: 200A1700V

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MFG: EUPEC

D/C: 1IGBT: 200A1700V

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1700	V
Collector-gate voltage R_GE = 20 k	V_CGR	1700
Gate-emitter voltage	V_GE	±20
DC collector current T_C = 25 T_C = 80	I_C	290 200	A
Pulsed collector current, tp =1 ms T_C = 25 T_C = 80	I_Cpuls	580 400	A
Power dissipation per IGBT T_C = 25	P_tot	1750	W
Chip temperature	T_j	+150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	0.07	K/W
Diode thermal resistance, chip case	R_thJCD	0.21	K/W
Insulation test voltage, t = 1min.	V_is	4000	Vac
Creepage distance	-	20	mm
Clearance	-	11	mm
DIN humidity category, DIN 40 040	-	F	sec
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56	sec

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R_{G on,min} = 6.8 Ohm

BSM200GA170DN2
PDF/DataSheet Download

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BSM200GA120DN2
The BSM200GA120DN2 is a type of IGBT power module.features ofit are:(1)single switch;(2)incl uding fast free-wheeling diodes;(3)package with insulated metal base plate. The absolute maximum ratings and electrical characteristics(Tj = 25 °C) of the BSM200GA1...
BSM200GA120D
The BSM200GA120D is one kind of IGBT-modules. The absolute maximum ratings of the BSM200GA120D can be summarized as:(1)collector-emitter voltage: 1200 V;(2)DC-collector current:370 A;(3)repetitive peak collector current:400 A;(4)total power dissipation:1470 ...
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