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MFG:EUPEC D/C:1IGBT&1DIO: 200A1200V

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MFG: EUPEC

D/C: 1IGBT&1DIO: 200A1200V

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage, R_GS= 20 k	V_CGR	1200
Gate-source voltage	V _GE	± 20
DC collector current T_C= 25 °C T_C= 80 °C	I_c	290 200	A
Pulsed collector current, t_p= 1 ms T_C = 25 °C T_C = 80 °C	Ic_puls	580 400	A
Power dissipation, T_C= 25 °C	P_tot	1400	W
Chip temperature	T_j	+ 150	°C
Storage temperature	T_stg	-55 ... + 150	°C

• Single switch with chopper diode
• Package with insulated metal base plate

BSM200GAL120DN2
PDF/DataSheet Download

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Hochstzulassige Werte / Maximum rated values
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BSM200GA170DN2S
The BSM200GA170DN2S is one kind of IGBT-modules. The absolute maximum ratings of the BSM200GA170DN2S can be summarized as:(1)collector-emitter voltage:1200 V;(2)DC-collector current:370 A;(3)repetitive peak collector current:400 A;(4)total power dissipation:...
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BSM200GA120DN2
The BSM200GA120DN2 is a type of IGBT power module.features ofit are:(1)single switch;(2)incl uding fast free-wheeling diodes;(3)package with insulated metal base plate. The absolute maximum ratings and electrical characteristics(Tj = 25 °C) of the BSM200GA1...
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The BSM200GA120D is one kind of IGBT-modules. The absolute maximum ratings of the BSM200GA120D can be summarized as:(1)collector-emitter voltage: 1200 V;(2)DC-collector current:370 A;(3)repetitive peak collector current:400 A;(4)total power dissipation:1470 ...
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