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MFG:SIEMENS D/C:6IGBT: 20A600V

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MFG: SIEMENS

D/C: 6IGBT: 20A600V

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	600	V
Collector-gate voltage R_GE = 20 k	V_CGR	600
Gate-emitter voltage	V_GE	±20
DC collector current T_C= 40	I_C	20	A
Pulsed collector current, tp = 1 ms T_C = 40	I_Cpuls	40	A
Power dissipation per IGBT T_C = 25	P_tot	90	W
Chip temperature	T_j	+ 150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	1.6	K/W
Diode thermal resistance, chip case	R_thJCD	1.8	K/W
Insulation test voltage, t = 1min.	V_is	2500	Vac
Creepage distance	-	16	mm
Clearance	-	11	mm
DIN humidity category, DIN 40 040	-	F	sec
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56	sec

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate

BSM20GD60DN2
PDF/DataSheet Download

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Hochstzulassige Werte / Maximum rated values
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The BSM200GB120DN3 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 200 A (Tc=80 °C) or 290 A (Tc=25 °C);(3)Power dissipation per IGBT: 1400 W;(4)Chip te...
BSM200GB120DN2
The BSM200GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 200 A (Tc=80 °C) or 290 A (Tc=25 °C);(3)Power dissipation per IGBT: 1400 W;(4)Chip te...
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