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Part Number: BSM254F

 

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BSM254F Maximum Ratings

Parameter Symbol
Values
 Unit
Collector-emitter voltage VDS
500
 V
Collector-gate voltage RGS = 20k VDGR
500
Gate-emitter voltage VGS
±20
Continuous drain current, TC = 25 ID
35
 A
Pulsed drain current, TC = 25 ID puls
140
Operating and storage temperature range Tj, Tstg
- 55 . + 150
Power dissipation, TC = 25 Ptot
400
 W
Thermal resistance Chip-case Rth JC
0.31
 K/W
Insulation test voltage2), t = 1min. Vis
2500
 Vac
Creepage distance, drain-source -
16
 mm
Clearance, drain-source -
11
DIN humidity category, DIN 40 040 -
F
 -
IEC climatic category, DIN IEC 68-1 -
55/150/56
1) See chapter Package Outline and Circuit Diagrams.
2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.

BSM254F Features

· Power module
· Half-bridge
· FREDFET
· N channel
· Enhancement mode
· Package with insulated metal base plate
· Package outline/Circuit diagram: 2a1)

BSM254F datasheet

BSM254F
PDF/DataSheet Download

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