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MFG:module Package Cooled:INFINEON D/C:05+

MFG:module Package Cooled:INFINEON D/C:05+

|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage RGE = 20 k |
VCGR |
1200 | |
|
Gate-emitter voltage |
VGE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
IC |
38 25 |
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
lCpuls |
76 50 | |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
200 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
BSM25GB120DN2
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