BSM25GB120DN2

IGBT Modules 1200V 25A DUAL

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SeekIC No. : 00141324 Detail

BSM25GB120DN2: IGBT Modules 1200V 25A DUAL

floor Price/Ceiling Price

US $ 27.55~30.61 / Piece | Get Latest Price
Part Number:
BSM25GB120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • Unit Price
  • $30.61
  • $27.55
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Half Bridge Module
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 38 A Gate-Emitter Leakage Current : 180 nA
Power Dissipation : 200 W Maximum Operating Temperature : + 150 C
Package / Case : Half Bridge1    

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 200 W
Configuration : Half Bridge Module
Package / Case : Half Bridge1
Gate-Emitter Leakage Current : 180 nA
Continuous Collector Current at 25 C : 38 A


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate



Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 k
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC

38

25

A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
lCpuls

76

50

Power dissipation per IGBT
TC = 25 °C
Ptot
200
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-55 ... + 150
°C



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