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MFG:SIEMENS D/C:6IGBT: 25A1200V

MFG:SIEMENS D/C:6IGBT: 25A1200V

|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
35
25
|
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
70
50 | |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
200 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM25GD120D2
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