Purchase BSM300GA120DN2, In-stock BSM300GA120DN2 From SeekIC.
MFG:EUPEC D/C:1IGBT: 300A1200V
- Table of contents:
BSM300GA120DN2
-
Suppliers
DataSheet
General Description
BSM300GA120DN2 Maximum Ratings
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage | VCE |
1200 |
V |
| Collector-gate voltage RGE = 20 k |
VCGR |
1200 | |
| Gate-emitter voltage | VGE |
±20 | |
| DC collector current TC = 25 TC = 80 |
IC |
430 300 |
A |
| Pulsed collector current, tp =1 ms TC = 25 TC = 80 |
ICpuls |
860 600 | |
| Power dissipation per IGBT TC = 25 |
Ptot |
2500 |
W |
| Chip temperature | Tj |
+150 |
|
| Storage temperature | Tstg |
-55 ... + 150 | |
| Thermal resistance, chip case | RthJC |
0.05 |
K/W |
| Diode thermal resistance, chip case | RthJCD |
0.125 | |
| Insulation test voltage, t = 1min. | Vis |
2500 |
Vac |
| Creepage distance | - |
20 |
mm |
| Clearance | - |
11 | |
| DIN humidity category, DIN 40 040 | - |
F |
- |
| IEC climatic category, DIN IEC 68-1 | - |
55 / 150 / 56 |
BSM300GA120DN2 Features
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM300GA120DN2
PDF/DataSheet Download
- Datasheet: BSM300GA120DN2
- File Size: 128147 KB
- Manufacturer: Infineon
- Click here to Download
- ·BSM100GAL120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
- 83162 KB
- ·BSM100GB120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 135361 KB
- ·BSM100GB120DN2K
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 116795 KB
- ·BSM100GB170DLC
- IGBT Module
- 83313 KB
- ·BSM100GB170DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 134096 KB
- ·BSM100GD120DLC
- EUPEC [eupec GmbH]
- IGBT-Module
- 88027 KB
- ·BSM100GD120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
- 189665 KB
- ·BSM100GP60
- EUPEC [eupec GmbH]
- Hochstzulassige Werte / Maximum rated values
- 217048 KB
BSM300GA120DN2 Relative Products
BSM300GA120DN
The BSM300GA120DN is designed as the IGBT power module that has four points of features:(1)single switch; (2)including fast free-wheeling diodes; (3)enlarged diode area; (4)package with insulated metal base plate. The absolute maximum ratings of the BSM300G...
BSM294F
BSM25GD120DN2
BSM25GD120D2
BSM25GB120DN2
BSM25GAL120DN2
Hotspot Suppliers Product
MSP430F1232IPWR
Price: 1.5-2.5 USD
ultralow-power microcontroller, 16BIT, 8KB FLASH, 28-TSSOP, 1.8 V - 3.6 V
OP213FSZ
Price: 0.85-1 USD
3.4MHZ, 8-Lead, SOP-8, operational amplifier, Analog Devices
LM12458CIV
Price: 15.2-25.8 USD
highly integrated, Data Acquisition System, PLCC, ±20 mA, 875 mW, 6.0V, Three operating modes
SKKT500/16E
Price: 50-100 USD
Thyristor, 1.5V, 0.27mΩ
MAX3232ECUP+
Price: 1-10 USD
±15kV ESD-Protected, Down to 10nA, 3.0V to 5.5V, Up to 1Mbps, True RS-232 Transceiver, SOP, Latchu...
LPC2136FBD64/01
Price: 3.3-306 USD
Single-chip 16-bit microcontroller, 60 MHz, 256K, QFP64, 3.0 V to 3.6 V, 1.5 W, 100 mA
SKIIP11NAB126V1
Price: 1-2 USD
3-phase bridge rectifier, brake chopper, bridge inverter, 1200V, module, 30A, 6.5mm
BCM5755KFBG
Price: 3.85-6.5 USD
Broadcom BCM5755KFBG
B82498B3150J000
Price: 0.01-0.05 USD
SMT inductor, High Q factor, B82498B3150J000
S80C196NP25
Price: 1-1.5 USD
16-bit MCS 96 microcontroller, chip-select unit, BGA, 1.5 W, –0.5 V to +7.0 V
OX16PCI954-TQC60-A1
Price: 6-6.5 USD
single chip solution, QFP-176, 4.5 to 5.5 V, High performance, Four UART channels, 128-byte, dual ...
IDT77305L12PF
Price: 2-3.75 USD
utopiafifo, 4 port multiplexer FIFO, QFP, -0.5 to +7.0V Terminal Voltage, 50 mA Output Current
