BSM300GA120DN2

IGBT Modules 1200V 300A SINGLE

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SeekIC No. : 00141316 Detail

BSM300GA120DN2: IGBT Modules 1200V 300A SINGLE

floor Price/Ceiling Price

US $ 76.73~96.32 / Piece | Get Latest Price
Part Number:
BSM300GA120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~5
  • 5~10
  • 10~50
  • Unit Price
  • $96.32
  • $91.59
  • $86.69
  • $76.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 430 A Gate-Emitter Leakage Current : 320 nA
Power Dissipation : 2500 W Maximum Operating Temperature : + 150 C
Package / Case : 62MM    

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 320 nA
Package / Case : 62MM
Continuous Collector Current at 25 C : 430 A
Power Dissipation : 2500 W


Features:

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate



Specifications

Parameter Symbol
Values
Unit
Collector-emitter voltage VCE
1200
V
Collector-gate voltage
RGE = 20 k
VCGR
1200
Gate-emitter voltage VGE
±20
DC collector current
TC = 25
TC = 80
IC
430
300
A
Pulsed collector current, tp =1 ms
TC = 25
TC = 80
ICpuls
860
600
Power dissipation per IGBT
TC = 25
Ptot
2500
W
Chip temperature Tj
+150
Storage temperature Tstg
-55 ... + 150
Thermal resistance, chip case RthJC
0.05
K/W
Diode thermal resistance, chip case RthJCD
0.125
Insulation test voltage, t = 1min. Vis
2500
Vac
Creepage distance -
20
mm
Clearance -
11
DIN humidity category, DIN 40 040 -
F
-
IEC climatic category, DIN IEC 68-1 -
55 / 150 / 56



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