Purchase BSM300GA120DN2E316, In-stock BSM300GA120DN2E316 From SeekIC.
- Table of contents:
BSM300GA120DN2E316
-
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DataSheet
General Description
BSM300GA120DN2E316 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
430
300
|
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
860
600 | |
|
Power dissipation,per IGBT TC = 25 °C |
Ptot |
2500 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM300GA120DN2E316 Features
• Single switch
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
BSM300GA120DN2E3166
PDF/DataSheet Download
- Datasheet: BSM300GA120DN2E3166
- File Size: 129822 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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