BSM300GA120DN2S E3256

The BSM300GA120DN2S E3256 is a kind of IGBT power module. It has some features as follows. (1) single switch; (2) including fast free-wheeling diodes; (3) enlarged diode area; (4) package with insulated metal base plate. It is available in single switch 1.

The following is its maximum ratings of BSM300GA120DN2S E3256. (1): collector-emitter voltage (VCE) is 1200 V; (2): collector-gate voltage (VCGR) is 1200 V at RGE is 20 kW; (3): gate-emitter voltage (VGE) is ±20 V; (4): DC collector current (IC) is 430 A at TC is 25 and is 300 A at TC is 80 ; (5): pulsed collector current (ICpuls) is 860 A at TC is 25 and is 600 A at TA is 80 ; (6): power dissipation per IGBT is 2500 W at TC is 25 ; (7): chip temperature (Tj) is 150 ; (8): storage temperature is from -55 to 150 . Then is about the electrical characteristics at Tj is 25 . (1): the typical gate threshold voltage is 5.5 V,the minimum is 4.5 V and the maximum is 6.5 V at VGE is VCE,IC is 12 mA; (2): the typical collector-emitter saturation voltage is 2.5 V and the maximum is 3 V when VGE is 15 V and IC is 300 A; (3): the maximum gate-emitter leakage current is 320 nA when VGE is 20 V and VCE is 0 V; (4): the minimum transconductance is 124 S at VCE is 20 V and IC is 300 A; (5): the typical input capacitance is 22 nF when VCE is 25 V, VGE is 0 V and f is 1 MHz; (6): the typical reverse transfer capacitance is 1.2 nF at VCE is 25 V,VGE is 0 V and f is 1 MHz.

If you want more details about BSM300GA120DN2S E3256,please download the datasheet at www.seekic.com.