BSM300GA170DN2, US $ 109.52-121.69 , Infineon Technologies, BSM300GA170DN2 DataSheet download, circuit diagram from SeekIC.com

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BSM300GA170DN2: IGBT Modules N-CH 1.7KV 440A

BSM300GA170DN2 Data Sheet

US $ 109.52~121.69 / Piece | Get Latest Price

Part Number:: BSM300GA170DN2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$121.69
$109.52

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Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Single Dual Emitter
Collector- Emitter Voltage VCEO Max :	1700 V	Continuous Collector Current at 25 C :	440 A
Maximum Operating Temperature :	+ 150 C	Package / Case :	62MM

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Package / Case : 62MM
Collector- Emitter Voltage VCEO Max : 1700 V
Configuration : Single Dual Emitter
Continuous Collector Current at 25 C : 440 A

Features:

• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R_{G on,min} = 5.6 Ohm

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1700	V
Collector-gate voltage R_GE = 20k	V_CGR	1700
Gate-emitter voltage	V_GE	± 20
DC collector current T_C = 25 T_C = 80	I_C	440 300	A
Pulsed collector current, tp = 1 ms T_C = 25 T_C = 80	I_Cpuls	880 600	A
Power dissipation per IGBT T_C = 25	P_tot	2500	W
Chip temperature	T_j	+ 150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	0.05	K/W
Diode thermal resistance, chip case	R_thJCD	0.17	K/W
Insulation test voltage, t = 1min.	V_is	4000	Vac
Creepage distance	-	20	mm
Clearance	-	11	mm
DIN humidity category, DIN 40 040	-	F	sec
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56	sec

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BSM300GA170DN2

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