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Part Number: BSM300GA170DN2 E3166

 

 

 

 

 

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BSM300GA170DN2 E3166 Maximum Ratings

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1700
V
Collector-gate voltage, RGS = 20 k
VCGR
1700
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
440
300
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
880
600
Power dissipation,per IGBT TC = 25 °C
Ptot
2500
W
Chip temperature
Tj
+ 150
°C
Storage temperature

Tstg

-55 ... + 150

BSM300GA170DN2 E3166 Features

• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• R G on,min = 5.6 Ohm

BSM300GA170DN2 E3166 datasheet

BSM100GAL120DN2
PDF/DataSheet Download

  • Datasheet: BSM100GAL120DN2
  • File Size: 83162 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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