BSM35GD120DN2E3224

IGBT Modules N-CH 1.2KV 50A

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SeekIC No. : 00141320 Detail

BSM35GD120DN2E3224: IGBT Modules N-CH 1.2KV 50A

floor Price/Ceiling Price

US $ 37.26~38.95 / Piece | Get Latest Price
Part Number:
BSM35GD120DN2E3224
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • Unit Price
  • $38.95
  • $37.26
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Hex
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.7 V
Continuous Collector Current at 25 C : 50 A Gate-Emitter Leakage Current : 150 nA
Power Dissipation : 280 W Maximum Operating Temperature : + 150 C
Package / Case : EconoPACK 2 Packaging : Reel    

Description

Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Packaging : Reel
Power Dissipation : 280 W
Package / Case : EconoPACK 2
Continuous Collector Current at 25 C : 50 A
Gate-Emitter Leakage Current : 150 nA
Collector-Emitter Saturation Voltage : 2.7 V


Description

The BSM35GD120DN2E3224 is designed as one kind of IGBT power module. Features of it are:(1)solderable power module; (2)3-phase full-bridge; (3)including fast free-wheel diodes; (4)package with insulated metal base plate.

The absolute maximum ratings of the BSM35GD120DN2E3224 can be summarized as:(1)collector-emitter voltage:1200 V;(2)collector-gate voltage RGE=20 k:1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current Tc=25 °C:150 A;(5)DC collector current Tc=80 °C:100 A;(6)IEC climatic category, DIN IEC 68-1:55 / 150 / 56;(7)DIN humidity category, DIN 40 040:F;(8)clearance:11 mm;(9)insulation test voltage, t=1min.:2500 Vac;(10)storage temperature:-55 to +150 . If you want to know more information such as the electrical characteristics about the BSM35GD120DN2E3224, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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