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BSN10

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 50 V ±VGSO gate-source voltage open drain 20 V ID ...

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SeekIC No. : 004302207 Detail

BSN10: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-sourc...

BSN10 Data Sheet

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Part Number:
BSN10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
50
V
±VGSO
gate-source voltage
open drain
20
V
ID
DC drain current
175
mA
IDM
peak drain current
300
A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
830
W
Tstg
storage temperature
-65
150
°C
Tj
operating junction temperature
150
°C

Note:1. Device mounted on a printed circuit board, maximum lead length 4 mm.




Description

N-channel BSN10 enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications.




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