BSN20W Selling Leads, Price trend, BSN20W DataSheet download, circuit diagram from SeekIC.com

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Thin and thick film circuits· General purpose fast switching applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage ...

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SeekIC No. : 004302211 Detail

BSN20W: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Thin and thick film circuits· General purpose fast switching applications.Specifications ...

BSN20W Data Sheet

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Part Number:: BSN20W
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/18

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Recent History
What is this?

BSN20 /T3 evaluate
MOSFET TRENCH 31V-99V G2 TAPE 13
BSN20,215 evaluate
US $.05 - .05 / Piece

MOSFET N-CH TRNCH 50V 173MA
BSN20,235 evaluate
US $.04 - .04 / Piece

MOSFET TRENCH 31V-99V G2

Product Details

Description

Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.

Application

· Thin and thick film circuits
· General purpose fast switching applications.

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage			50	V
±V_GSO	gate-source voltage	open drain		±20	V
I_D	DC drain current			80	mA
I_DM	peak drain current			300	A
P_tot	total power dissipation	up to T_amb = 25 °C; note 1		200	W
T_stg	storage temperature		-65	+150	°C
T_j	operating junction temperature		-65	150	°C

Note:1. Device mounted on an epoxy printed- circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm x 10 mm.

Description

N-channel enhancement mode vertical D-MOS transistor BSN20W in a 3 pin plastic SOT323 SMD package.

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BSN20W

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