BSN304,126

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Power - Max: 1W
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 300mA
Mounting Type: Through Hole
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) @ Vds: 120pF @ 25V
Drain to Source Voltage (Vdss): 300V
Rds On (Max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
Packaging: Tape & Box (TB)


Parameters:

Technical/Catalog Information	BSN304,126
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	300mA
Rds On (Max) @ Id, Vgs	6 Ohm @ 250mA, 10V
Input Capacitance (Ciss) @ Vds	120pF @ 25V
Power - Max	1W
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3
FET Feature	Logic Level Gate
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSN304,126 BSN304,126