BSO064N03S

MOSFET OptiMOS 2 PWR TRANST

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BSO064N03S: MOSFET OptiMOS 2 PWR TRANST

floor Price/Ceiling Price

Part Number:
BSO064N03S
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 6.4 mOhms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 6.4 mOhms
Package / Case : DSO-8


Features:

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Avalanche rated
• dv /dt rated



Specifications

Parameter
Symbol
Conditions
Values
Unit
10 secs
steady state
Continuous drain current
ID
TA=25 °C1)

16

12

A
TA=70 °C1)

12

9.9

Pulsed drain current, one channel active
I Dpulse
TA=25 °C2)

60

A
Avalanche energy, single pulse
EAS
I D=-9.1 A, RGS=25
170
mJ
Reverse diode dv/dt
dv/dt
ID=-9.1 A, VDS=20 V,
di /dt =-200 A/s,
T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V

Power dissipation

Ptot

TA=25 °C1)

2.5

1.56

W

Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56

°C




Parameters:

Technical/Catalog InformationBSO064N03S
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs6.4 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 3620pF @ 15V
Power - Max1.56W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 5V
Package / CaseDSO-8
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSO064N03S
BSO064N03S



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