BSO080P03S

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : - 14.9 A
Resistance Drain-Source RDS (on) : 8 m Ohms


Features:

• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• dv /dt rated
• Ideal for fast switching buck converter


Specifications

Parameter	Symbol	Conditions	Values		Unit
			10 secs	steady state
Continuous drain current	ID	TA=25 °C1)	-14.9	-12.6	A
		TA=70 °C1)	-11.9	-10
Pulsed drain current, one channel active	I Dpulse	TA=25 °C2)	-60		A
Avalanche energy, single pulse	EAS	I D=-9.1 A, RGS=25	248		mJ
Reverse diode dv/dt	dv/dt	ID=-9.1 A, VDS=20 V, di /dt =-200 A/s, T j,max=150 °C	-6		kV/s
Gate source voltage	VGS		±25		V
Power dissipation	Ptot	TA=25 °C1)	2.36	1.56	W
Operating temperature	T j , T stg		-55 ... +150		°C
IEC climatic category, DIN IEC 68-1			55/150/56		°C

Parameters:

Technical/Catalog Information	BSO080P03S
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.6A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14.9A, 10V
Input Capacitance (Ciss) @ Vds	5890pF @ 25V
Power - Max	1.79W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	136nC @ 10V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSO080P03S BSO080P03S