BSO119N03S

MOSFET N-CH 30V 9A

product image

BSO119N03S Picture
SeekIC No. : 00151581 Detail

BSO119N03S: MOSFET N-CH 30V 9A

floor Price/Ceiling Price

US $ .36~.58 / Piece | Get Latest Price
Part Number:
BSO119N03S
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.58
  • $.52
  • $.46
  • $.36
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 11.9 mOhms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 9 A
Package / Case : DSO-8
Resistance Drain-Source RDS (on) : 11.9 mOhms


Features:

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Avalanche rated
• dv /dt rated



Specifications

Parameter
Symbol
Conditions
Values
Unit
10 secs
steady state
Continuous drain current
ID
TA=25 °C1)

11

9.0

A
TA=70 °C1)

9.1

7.2

Pulsed drain current, one channel active
I Dpulse
TA=25 °C2)

44

A
Avalanche energy, single pulse
EAS
I D=-9.1 A, RGS=25
58
mJ
Reverse diode dv/dt
dv/dt
ID=-9.1 A, VDS=20 V,
di /dt =-200 A/s,
T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V

Power dissipation

Ptot

TA=25 °C1)

2.5

1.56

W

Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56

°C




Parameters:

Technical/Catalog InformationBSO119N03S
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs11.9 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 1730pF @ 15V
Power - Max1.56W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs13nC @ 5V
Package / CaseDSO-8
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSO119N03S
BSO119N03S
BSO119N03SINDKR ND
BSO119N03SINDKRND
BSO119N03SINDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Test Equipment
Audio Products
Cables, Wires
Inductors, Coils, Chokes
Resistors
View more