BSO150N03

MOSFET N-CH 30V 7.6A

product image

BSO150N03 Picture
SeekIC No. : 00162175 Detail

BSO150N03: MOSFET N-CH 30V 7.6A

floor Price/Ceiling Price

Part Number:
BSO150N03
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7.6 A
Resistance Drain-Source RDS (on) : 15 mOhms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSO-8 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 7.6 A
Resistance Drain-Source RDS (on) : 15 mOhms
Package / Case : DSO-8


Features:

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Avalanche rated
• dv /dt rated



Specifications

Parameter
Symbol
Conditions
Values
Unit
10 secs
steady state
Continuous drain current
ID
TA=25 °C1)

9.1

7.6

A
TA=70 °C1)

7.3

6.1

Pulsed drain current, one channel active
I Dpulse
TA=25 °C2)

36

A
Avalanche energy, single pulse
EAS
I D=-9.1 A, RGS=25
82
mJ
Reverse diode dv/dt
dv/dt
ID=-9.1 A, VDS=20 V,
di /dt =-200 A/s,
T j,max=150 °C
6
kV/s
Gate source voltage
VGS
±25
V

Power dissipation

Ptot

TA=25 °C1)

2.0

1.4

W

Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56

°C




Parameters:

Technical/Catalog InformationBSO150N03
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7.6A
Rds On (Max) @ Id, Vgs15 mOhm @ 9.1A, 10V
Input Capacitance (Ciss) @ Vds 1890pF @ 15V
Power - Max1.4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs15nC @ 5V
Package / CaseDSO-8
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSO150N03
BSO150N03
BSO150N03INDKR ND
BSO150N03INDKRND
BSO150N03INDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Crystals and Oscillators
Circuit Protection
Inductors, Coils, Chokes
Soldering, Desoldering, Rework Products
View more