BSO613SPV

MOSFET P-CH 60V 3.44A DSO-8

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SeekIC No. : 003430972 Detail

BSO613SPV: MOSFET P-CH 60V 3.44A DSO-8

floor Price/Ceiling Price

Part Number:
BSO613SPV
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3.44A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 30nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 875pF @ 25V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-DSO-8
Current - Continuous Drain (Id) @ 25° C: 3.44A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V
Input Capacitance (Ciss) @ Vds: 875pF @ 25V


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated



Specifications

Parameter
Symbol
Values
Unit
Continuous drain current
TA = 25 °C
ID
-3.44
A
Pulsed drain current, one channel active
TA = 25 °C
I Dpuls
-13.8
A
Avalanche energy, single pulse
ID = 3.1 A , VDD = 25 V, RGS = 25
ID = -2 A , VDD = -25 V, RGS = 25
EAS
150
mJ

Avalanche current,periodic limited by Tjmax

EAR

0.25

A

Avalanche energy, periodic limited by T jmax
E AR
0.18
mJ
Reverse diode dv/dt
IS = 3.1 A, VDS = 48 V, di/dt = 200 A/s,
IS = -2 A, VDS = -48 T jmax = 150 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V

Power dissipation, one channel active
TA = 25 °C

Ptot

2.5

W

Operating temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56

°C




Parameters:

Technical/Catalog InformationBSO613SPV
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C3.44A
Rds On (Max) @ Id, Vgs130 mOhm @ 3.44A, 10V
Input Capacitance (Ciss) @ Vds 875pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseDSO-8
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSO613SPV
BSO613SPV



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