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BSP090

Features: · High speed switching· No secondary breakdown· Very low on-state resistanceApplication· Motor and actuator drivers· Power management· Synchronized rectificationSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) ...

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SeekIC No. : 004302276 Detail

BSP090: Features: · High speed switching· No secondary breakdown· Very low on-state resistanceApplication· Motor and actuator drivers· Power management· Synchronized rectificationSpecifications SYMBO...

BSP090 Data Sheet

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Part Number:
BSP090
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High speed switching
· No secondary breakdown
· Very low on-state resistance


Application

· Motor and actuator drivers
· Power management
· Synchronized rectification


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
-30
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Ts = 100 °C; note 1
-5.7
A
IDM
peak drain current
note 2
-22
A
Ptot
total power dissipation
Ts = 100 °C
5
W
Tamb = 25 °C; note 3
3.3
W
Tamb = 25 °C; note 4
1.25
W
Tstg
storage temperature
-65
+150
°C
TJ
operating junction temperature
-65
+150
°C
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a R th a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a R th a-tp (ambient to tie-point) of 90 K/W.


Description

P-channel enhancement mode vertical D-MOS transistor BSP090 in a 4-pin plastic SOT223 SMD package.


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