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BSP108

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdowPinoutSpecificationsDrain-source voltage .........................VDS max. 80VGate-source voltage (open drain) .................±VGSO max .20VDrain current (DC)......................... ID max.500 mADrain ...

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SeekIC No. : 004302280 Detail

BSP108: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdowPinoutSpecificationsDrain-source voltage .........................VDS max. 80VGate-source voltage (open d...

BSP108 Data Sheet

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Part Number:
BSP108
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdow


Pinout

Connection Diagram


Specifications

Drain-source voltage .........................VDS max. 80V

Gate-source voltage (open drain) .................±VGSO max .20V
Drain current (DC)......................... ID max. 500 mA
Drain current (peak)........................ IDM max. 1.0mA
Total power dissipation up to Tamb = 25 °C (note 1)........Ptot max. 1.5 W
Storage temperature range ..................Tstg -65 to + 150 °C
Junction temperature.........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.




Description

N-channel enhancement mode vertical D-MOS transistor BSP108 in a  miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.

 




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