MFG:NXP Semiconductors Category:Discrete Semiconductor Products
SOT223-1.jpg)
Category: Discrete Semiconductor Products
MFG: NXP Semiconductors
Descriptions: MOSFET N-CH 100V 520MA SOT223
5000
.28050
1402.50
| Technical/Catalog Information | BSP110,115 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 520mA |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 150mA, 5V |
| Input Capacitance (Ciss) @ Vds | 40pF @ 10V |
| Power - Max | 6.25W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT223; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSP110,115 BSP110,115 |
BSP030
PDF/DataSheet Download
N-channel enhancement mode vertical D-MOS transistor BSP110 in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.
N-channel enhancement mode vertical D-MOS transistor BSP108 in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
N-channel enhancement mode vertical D-MOS transistor BSP107 in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching.
N-channel enhancement mode vertical D-MOS transistor BSP106 in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers.
SOT223-1.jpg)
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