BSP120

Drain-source voltage .........................V_DS max. 200 V
Gate-source voltage (open drain) .................±V_GSO max. 20 V
Drain current (DC).......................... I_D max. 250 mA
Drain current (peak)........................ I_DM max. 800 mA
Total power dissipation up to T_amb = 25 °C (note 1) ........P_tot max. 1.5 W
Storage temperature range ...................T_stg -65 to + 150 °C
Junction temperature .........................T_j max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.

N-channel enhancement mode vertical D-MOS transistor BSP120 in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.