BSP121

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecifications Drain-source voltage VDS max. 200V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current (DC) ID max. 350 mA Drain current (p...

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BSP121 Picture
SeekIC No. : 004302283 Detail

BSP121: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecifications Drain-source voltage VDS max. 200V Gate-source voltage (open d...

floor Price/Ceiling Price

Part Number:
BSP121
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown



Pinout

  Connection Diagram


Specifications

Drain-source voltage
VDS
max.
200V
Gate-source voltage (open drain)
±VGSO
max.
20 V
Drain current (DC)
ID
max.
350 mA
Drain current (peak)
IDM
max.
1.2 A
Total power dissipation up to Tamb = 25 °C (note 1)
Ptot
1.5W
Storage temperature range
Tstg
-65 to + 150 °C
Junction temperature
Tj
max.
150 °C
Note
1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mmX 1.5 mm; mounting pad for the drain lead
min. 6 cm2.



Description

N-channel enhancement mode vertical D-MOS transistor BSP121 in aminiature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.




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