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MFG:infineon Package Cooled:SOT-223 D/C:09+

Five Points

MFG: infineon

Package Cooled: SOT-223

D/C: 09+

Parameter	Symbol	Value	Unit
Continuous drain current T_A=25° C T_A=70°C	I_D	0.37 0.3	A
Pulsed drain current T_A=25°C	I_{D puls}	1.48	A
Reverse diode dv/dt I_S=-0.26A, V_DS=-200V, di/dt=-200A/s, T_jmax=150°C	dv/dt	6	kV/s
Gate source voltage	V_GS	± 20	V
ESD sensitivity (HBM) as per MIL-STD 883		Class 1
Power dissipation T_A=25°C	P_tot	1.8	V
Operating and storage temperature	T_j, T_stg	-55... +150	W
IEC climatic category; DIN IEC 68-1		55/150/00	°C

· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated

BSP123
PDF/DataSheet Download

BSP122,115
MOSFET N-CH 200V 0.55A SOT223
BSP122
N-channel enhancement mode vertical D-MOS transistor BSP122in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
BSP121
N-channel enhancement mode vertical D-MOS transistor BSP121 in aminiature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
BSP120
N-channel enhancement mode vertical D-MOS transistor BSP120 in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
BSP110,115
MOSFET N-CH 100V 520MA SOT223
BSP110
N-channel enhancement mode vertical D-MOS transistor BSP110 in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.

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